PART |
Description |
Maker |
NC501/12M NC501/15M |
NOISE SOURCE, 0.2-500MHz, -143dBm/Hz, 31dB, 116.012dBm, THROUGH HOLE MOUNT, TO-8-3
|
NOISE COM
|
EL5130IS-T7 EL5130ISZ EL5131 EL5131IW-T7 EL5131IWZ |
500MHz Low Noise Amplifiers 1 CHANNEL, VIDEO AMPLIFIER, PDSO8 500MHz Low Noise Amplifiers 500MHz的低噪声放大
|
http:// INTERSIL[Intersil Corporation] Intersil, Corp.
|
MRF587 MRF587-15 |
The RF Line NPN Silicon High Frequency Transistor Noise Figure 3.0 dB@ 500MHz
|
M/A-COM Technology Solutions, Inc. M/A-COM Technology Solution...
|
ADR360 ADR361 ADR363 ADR364 ADR365 ADR366 |
Low Power, Low Noise Voltage Reference with Sink/Source Capability, 2.048 V-OUT Low Power, Low Noise Voltage Reference with Sink/Source Capability, 2.5 V-OUT Low Power, Low Noise Voltage Reference with Sink/Source Capability, 3.0 V-OUT Low Power, Low Noise Voltage Reference with Sink/Source Capability, 4.096 V-OUT Low Power, Low Noise Voltage Reference with Sink/Source Capability, 5.0 V-OUT Low Power, Low Noise Voltage Reference with Sink/Source Capability, 3.3 V-OUT
|
Analog Devices
|
CNS7105 |
COAXIAL AMPLIFIED NOISE SOURCE
|
Micronetics, Inc.
|
SMN7108 SMN7108-D1C |
1/2 INCH SURFACE MOUNT AMPLIFIED NOISE SOURCE
|
Micronetics, Inc.
|
SMN3110-A2A |
LOW BIAS VOLTAGE SURFACE MOUNT NOISE SOURCE
|
Micronetics, Inc.
|
SMN3018-D1D SMN3018-E1D |
SURFACE MOUNT NOISE SOURCE 200 MHZ TO 6.0 GHZ
|
Micronetics, Inc.
|
V54C316162V-6 V54C316162V-55 V54C316162V-7 |
200/183/166/143 MHz 3.3 VOLT, 4K REFRESH ULTRA HIGH PERFORMANCE 1M X 16 SDRAM 2 BANKS X 512Kbit X 16 200/183/166/143 MHz.3伏,刷新4K的超高性能100万16 SDRAMX 512Kbit × 16 MORAY EEL 200/183/166/143 MHz.3伏,刷新4K的超高性能100万16 SDRAM组X 512Kbit × 16 200/183/166/143 MHz 3.3 VOLT/ 4K REFRESH ULTRA HIGH PERFORMANCE 1M X 16 SDRAM 2 BANKS X 512Kbit X 16
|
Mosel Vitelic, Corp. Macronix International Co., Ltd. Mosel Vitelic Corp
|
D1201UK D1201 |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(10W-12.5V-500MHz,Single Ended)(镀金多用DMOS射频硅场效应10W-12.5V-500MHz,单端) METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
D1202UK D1202 |
METAL GATE RF SILICON FET Gold Metallised Multi-Purpose Silicon DMOS RF FET(20W-12.5V-500MHz,Single Ended)(镀金多用DMOS射频硅场效应20W-12.5V-500MHz,单端)
|
SEME-LAB[Seme LAB] TT electronics Semelab Limited
|